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3D Active Edge Silicon Detector Tests With 120 GeV Muons

C. Da Via,Mario Deile,J. Hasi,C. J. Kenney,Angela Kok,S. I. Parker,S. Watts,G. Anelli,Valentina Avati,V. Bassetti,V. Boccone,M. Bozzo,K. Eggert,Fabrizio Ferro,A.V. Inyakin,J. Kapłon,Julio Lozano Bahílo,Alessandro Morelli,H. Niewiadomski,E. Noschis,F. Oljemark,M. Oriunno,Kenneth Österberg,G. Ruggiero,Walter Snoeys,Stefan Tapprogge

Detector

Silicon

Physics

2009

3D detectors with electrodes penetrating through the silicon wafer and covering the edges were tested in the SPS beam line X5 at CERN in autumn 2003. Detector parameters including efficiency, signal-to-noise ratio, and edge sensitivity were measured using a silicon telescope as a reference system. The measured sensitive width and the known silicon width were equal within less than 10 mum.

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“3D Active Edge Silicon Detector Tests With 120 GeV Muons” is a paper by C. Da Via Mario Deile J. Hasi C. J. Kenney Angela Kok S. I. Parker S. Watts G. Anelli Valentina Avati V. Bassetti V. Boccone M. Bozzo K. Eggert Fabrizio Ferro A.V. Inyakin J. Kapłon Julio Lozano Bahílo Alessandro Morelli H. Niewiadomski E. Noschis F. Oljemark M. Oriunno Kenneth Österberg G. Ruggiero Walter Snoeys Stefan Tapprogge published in 2009. It has an Open Access status of “green”. You can read and download a PDF Full Text of this paper here.