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Germanium channel MOSFETs: Opportunities and challenges

Huiling Shang,Martin M. Frank,Evgeni Gusev,J. O. Chu,Stephen W. Bedell,K.W. Guarini,M. Ieong

MOSFET

Germanium

Channel (broadcasting)

2006

This paper reviews progress and current critical issues with respect to the integration of germanium (Ge) surface-channel MOSFET devices as well as strained-Ge buried-channel MOSFET structures. The device design and scalability of strained-Ge buried-channel MOSFETs are discussed on the basis of our recent results. CMOS-compatible integration approaches of Ge channel devices are presented.

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“Germanium channel MOSFETs: Opportunities and challenges” is a paper by Huiling Shang Martin M. Frank Evgeni Gusev J. O. Chu Stephen W. Bedell K.W. Guarini M. Ieong published in 2006. It has an Open Access status of “closed”. You can read and download a PDF Full Text of this paper here.