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DOI: 10.1116/1.4825349
OpenAccess: Closed
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Physical properties of epitaxial ZrN/MgO(001) layers grown by reactive magnetron sputtering

Antonio B. Mei,Brandon M. Howe,C Zhang,M. R. Sardela,J. N. Eckstein,Lars Hultman,Angus Rockett,I. Petrov,J. E. Greene

Mosaicity
Materials science
Electrical resistivity and conductivity
2013
Single-crystal ZrN films, 830 nm thick, are grown on MgO(001) at 450 °C by magnetically unbalanced reactive magnetron sputtering. The combination of high-resolution x-ray diffraction reciprocal lattice maps, high-resolution cross-sectional transmission electron microscopy, and selected-area electron diffraction shows that ZrN grows epitaxially on MgO(001) with a cube-on-cube orientational relationship, (001)ZrN‖(001)MgO and [100]ZrN‖[100]MgO. The layers are essentially fully relaxed with a lattice parameter of 0.4575 nm, in good agreement with reported results for bulk ZrN crystals. X-ray reflectivity results reveal that the films are completely dense with smooth surfaces (roughness = 1.3 nm, consistent with atomic-force microscopy analyses). Based on temperature-dependent electronic transport measurements, epitaxial ZrN/MgO(001) layers have a room-temperature resistivity ρ300K of 12.0 μΩ-cm, a temperature coefficient of resistivity between 100 and 300 K of 5.6 × 10−8 Ω-cm K−1, a residual resistivity ρo below 30 K of 0.78 μΩ-cm (corresponding to a residual resistivity ratio ρ300Κ/ρ15K = 15), and the layers exhibit a superconducting transition temperature of 10.4 K. The relatively high residual resistivity ratio, combined with long in-plane and out-of-plane x-ray coherence lengths, ξ‖ = 18 nm and ξ⊥ = 161 nm, indicates high crystalline quality with low mosaicity. The reflectance of ZrN(001), as determined by variable-angle spectroscopic ellipsometry, decreases slowly from 95% at 1 eV to 90% at 2 eV with a reflectance edge at 3.04 eV. Interband transitions dominate the dielectric response above 2 eV. The ZrN(001) nanoindentation hardness and modulus are 22.7 ± 1.7 and 450 ± 25 GPa.
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    Physical properties of epitaxial ZrN/MgO(001) layers grown by reactive magnetron sputtering” is a paper by Antonio B. Mei Brandon M. Howe C Zhang M. R. Sardela J. N. Eckstein Lars Hultman Angus Rockett I. Petrov J. E. Greene published in 2013. It has an Open Access status of “closed”. You can read and download a PDF Full Text of this paper here.