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Effect of post-growth anneal on the photoluminescence properties of GaSbBi

Subhasis Das,T.D. Das,S. Dhar

Photoluminescence

Annealing (glass)

Materials science

2013

The effect of post-growth anneal on the photoluminescence (PL) properties of GaSbBi layers, grown by liquid phase epitaxy, is investigated. It is observed that annealing for temperatures up to 650 °C increases the PL intensity and decreases the PL peak width indicating an improvement in the crystalline quality of the layer. A second peak at 0.72 eV, observed in GaSbBi only, is totally removed by annealing, suggesting that the peak is related to emission from Bi-related antisite defects. A red shift of up to 9 meV is also observed for the band edge emission peak as a result of anneal.

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“Effect of post-growth anneal on the photoluminescence properties of GaSbBi” is a paper by Subhasis Das T.D. Das S. Dhar published in 2013. It has an Open Access status of “closed”. You can read and download a PDF Full Text of this paper here.