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DOI: 10.1063/1.2993349
¤ OpenAccess: Green
This work has “Green” OA status. This means it may cost money to access on the publisher landing page, but there is a free copy in an OA repository.

Low-voltage C60 organic field-effect transistors with high mobility and low contact resistance

X.-H. Zhang,Bernard Kippelen

Transconductance
Contact resistance
Materials science
2008
State-of-the-art C60 organic transistors are reported here by engineering the essential electrode/semiconductor and dielectric/semiconductor interfaces. By using calcium (Ca) as the source and drain electrodes, the width-normalized contact resistance (RCW) at the electrode/semiconductor interface could be reduced to a constant value of 2 kΩ cm at a gate-source voltage (VGS) of 2.6 V, for devices with channel lengths ranging from 25 to 200 μm. Channel transconductance is observed to follow channel length scaling, and charge mobility average value of 2.5 cm2/Vs at VGS<5 V is found independent of channel length within the studied range.
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    Low-voltage C60 organic field-effect transistors with high mobility and low contact resistance” is a paper by X.-H. Zhang Bernard Kippelen published in 2008. It has an Open Access status of “green”. You can read and download a PDF Full Text of this paper here.