ϟ
 
DOI: 10.1063/1.1368378
¤ OpenAccess: Bronze
This work has “Bronze” OA status. This means it is free to read on the publisher landing page, but without any identifiable license.

Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films

Wei Yang,R. D. Vispute,Supab Choopun,Rakesh Sharma,T. Venkatesan,H. Shen

Responsivity
Materials science
Photodetector
2001
We report on the fabrication and characterization of visible blind ultraviolet photodetectors based on MgxZn1−xO. Using pulsed laser deposition technique, Mg0.34Zn0.66O thin films with a bandgap of 4.05 eV were epitaxially grown on c-plane sapphire substrates. The structural, electrical, and optical properties of epilayers were characterized using various techniques. Based on the Mg0.34Zn0.66O films, planar geometry photconductive type metal–semiconductor–metal photodetectors were fabricated. At a 5 V bias, a high responsivity of 1200 A/W was achieved at 308 nm, and the visible rejection (R308 nm/R400 nm) was more than four orders of magnitude. The 10%–90% rise and fall time were 8 ns and 1.4 μs, respectively.
Loading...
    Cite this:
Generate Citation
Powered by Citationsy*
    Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films” is a paper by Wei Yang R. D. Vispute Supab Choopun Rakesh Sharma T. Venkatesan H. Shen published in 2001. It has an Open Access status of “bronze”. You can read and download a PDF Full Text of this paper here.