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DOI: 10.1063/1.105158
OpenAccess: Closed
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Field-effect transistors using alkyl substituted oligothiophenes
Hitoshi Akimichi,K. Waragai,Shu Hotta,H. Kano,H. Sakaki
Field-effect transistor
Alkyl
Transistor
1991
Field-effect transistors (FETs) have been prepared using thin films of alkyl substituted oligothiophenes. These compounds bring about a significant increase in the source-drain channel current when compared to the conventional nonsubstituted oligothiophenes. The increased channel current mostly results from the enhanced carrier mobility of the material. We report that the FETs are readily made by a single routine process of casting or evaporation.
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“Field-effect transistors using alkyl substituted oligothiophenes” is a paper by Hitoshi Akimichi K. Waragai Shu Hotta H. Kano H. Sakaki published in 1991. It has an Open Access status of “closed”. You can read and download a PDF Full Text of this paper here.