Quantum Dot Interfaces for Memristor

Memristor, a two-terminal device, whose resistance changes according to the amount of charge that passes through, has become a popular choice for memory arrays and is expected to play a significant role in emerging memory technologies. These memories have a high speed, high density, non-destructive readout, long endurance, low operating voltage, simple structure, low-cost, and also a unique possibility of multilevel data storage. These devices can be constructed with a wide range of materials, such as metal oxides, nanomaterials, and organic materials, polymers with simple crossbar geometry. As a result, wide-range of mechanisms does play a role in electrical memory switching effect. Hence, a brief overview of all such mechanisms has been discussed. In the beginning, zero-dimensional materials, also referred as quantum dots, have become fascinating materials due to their size- and shape-tuneable optoelectronic properties, with a large surface to volume ratio, which can be suitably modified with caping molecules. In the recent past, these are explored as potential candidate for memristor with unique advantages. During this period, a lot of developments are witnessed; the present chapter is aimed to cover all such aspects.