Concept of a Molecular Charge Storage Dielectric Layer for Organic Thin‐Film Memory Transistors

Advanced MaterialsVolume 22, Issue 23 p. 2525-2528 Communication Concept of a Molecular Charge Storage Dielectric Layer for Organic Thin-Film Memory Transistors Martin Burkhardt, Martin Burkhardt Organic Materials & Devices—Institute of Polymer Materials University Erlangen-Nürnberg Martensstraße 07, D-91058 Erlangen (Germany)Search for more papers by this authorAbdesselam Jedaa, Abdesselam Jedaa Organic Materials & Devices—Institute of Polymer Materials University Erlangen-Nürnberg Martensstraße 07, D-91058 Erlangen (Germany)Search for more papers by this authorMichael Novak, Michael Novak Organic Materials & Devices—Institute of Polymer Materials University Erlangen-Nürnberg Martensstraße 07, D-91058 Erlangen (Germany)Search for more papers by this authorAlexander Ebel, Alexander Ebel Institute for Organic Chemistry II University Erlangen-Nürnberg Henkestraße 42, D-91054 Erlangen (Germany)Search for more papers by this authorKislon Voïtchovsky, Kislon Voïtchovsky Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge, MA 02139 (USA) Ecole Polytechnique Fédérale de Lausanne CH-1015 Lausanne (Switzerland)Search for more papers by this authorFrancesco Stellacci, Francesco Stellacci Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge, MA 02139 (USA) Ecole Polytechnique Fédérale de Lausanne CH-1015 Lausanne (Switzerland)Search for more papers by this authorAndreas Hirsch, Andreas HirschSearch for more papers by this authorMarcus Halik, Corresponding Author Marcus Halik [email protected] Organic Materials & Devices—Institute of Polymer Materials University Erlangen-Nürnberg Martensstraße 07, D-91058 Erlangen (Germany) Institute for Organic Chemistry II University Erlangen-Nürnberg Henkestraße 42, D-91054 Erlangen (Germany)Organic Materials & Devices—Institute of Polymer Materials University Erlangen-Nürnberg Martensstraße 07, D-91058 Erlangen (Germany).Search for more papers by this author Martin Burkhardt, Martin Burkhardt Organic Materials & Devices—Institute of Polymer Materials University Erlangen-Nürnberg Martensstraße 07, D-91058 Erlangen (Germany)Search for more papers by this authorAbdesselam Jedaa, Abdesselam Jedaa Organic Materials & Devices—Institute of Polymer Materials University Erlangen-Nürnberg Martensstraße 07, D-91058 Erlangen (Germany)Search for more papers by this authorMichael Novak, Michael Novak Organic Materials & Devices—Institute of Polymer Materials University Erlangen-Nürnberg Martensstraße 07, D-91058 Erlangen (Germany)Search for more papers by this authorAlexander Ebel, Alexander Ebel Institute for Organic Chemistry II University Erlangen-Nürnberg Henkestraße 42, D-91054 Erlangen (Germany)Search for more papers by this authorKislon Voïtchovsky, Kislon Voïtchovsky Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge, MA 02139 (USA) Ecole Polytechnique Fédérale de Lausanne CH-1015 Lausanne (Switzerland)Search for more papers by this authorFrancesco Stellacci, Francesco Stellacci Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge, MA 02139 (USA) Ecole Polytechnique Fédérale de Lausanne CH-1015 Lausanne (Switzerland)Search for more papers by this authorAndreas Hirsch, Andreas HirschSearch for more papers by this authorMarcus Halik, Corresponding Author Marcus Halik [email protected] Organic Materials & Devices—Institute of Polymer Materials University Erlangen-Nürnberg Martensstraße 07, D-91058 Erlangen (Germany) Institute for Organic Chemistry II University Erlangen-Nürnberg Henkestraße 42, D-91054 Erlangen (Germany)Organic Materials & Devices—Institute of Polymer Materials University Erlangen-Nürnberg Martensstraße 07, D-91058 Erlangen (Germany).Search for more papers by this author First published: 28 June 2010 https://doi.org/10.1002/adma.201000030Citations: 109Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Graphical Abstract A mixed self-assembled monolayer containing aliphatic and electron-accepting (C60) components is employed as an ultrathin molecular gate dielectric to facilitate reversible, nonvolatile electronic memory functionality in organic transistors at low supply voltages. By adjusting the stoichiometry of the monolayer components, the transistor and memory characteristics can be tuned. Supporting Information Detailed facts of importance to specialist readers are published as "Supporting Information". Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Filename Description adma_201000030_sm_suppdata.pdf1.2 MB suppdata Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. 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