N. Cartiglia

Construction of the first stage of the Pierre Auger Observatory has begun. The aim of the Observatory is to collect unprecedented information about cosmic rays above 1018eV. The first phase of the project, the construction and operation of a prototype system, known as the engineering array, has now been completed. It has allowed all of the sub-systems that will be used in the full instrument to be tested under field conditions. In this paper, the properties and performance of these sub-systems are described and their success illustrated with descriptions of some of the events recorded thus far.

The evolution of particle detectors has always pushed the technological limit in order to provide enabling technologies to researchers in all fields of science. One archetypal example is the evolution of silicon detectors, from a system with a few channels 30 years ago, to the tens of millions of independent pixels currently used to track charged particles in all major particle physics experiments. Nowadays, silicon detectors are ubiquitous not only in research laboratories but in almost every high-tech apparatus, from portable phones to hospitals. In this contribution, we present a new direction in the evolution of silicon detectors for charge particle tracking, namely the inclusion of very accurate timing information. This enhancement of the present silicon detector paradigm is enabled by the inclusion of controlled low gain in the detector response, therefore increasing the detector output signal sufficiently to make timing measurement possible. After providing a short overview of the advantage of this new technology, we present the necessary conditions that need to be met for both sensor and readout electronics in order to achieve 4D tracking. In the last section, we present the experimental results, demonstrating the validity of our research path.

In this paper we report on the timing resolution obtained in a beam test with pions of 180 GeV/c momentum at CERN for the first production of 45 µm thick Ultra-Fast Silicon Detectors (UFSD). UFSD are based on the Low-Gain Avalanche Detector (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test had a pad area of 1.7 mm2. The gain was measured to vary between 5 and 70 depending on the sensor bias voltage. The experimental setup included three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution was determined by doing Gaussian fits to the time-of-flight of the particles between one or more UFSD and the trigger counter. For a single UFSD the resolution was measured to be 34 ps for a bias voltage of 200 V, and 27 ps for a bias voltage of 230 V. For the combination of 3 UFSD the timing resolution was 20 ps for a bias voltage of 200 V, and 16 ps for a bias voltage of 230 V.

Low-Gain Avalanche Diodes (LGAD) are silicon detectors with output signals that are about a factor of 10 larger than those of traditional sensors. In this paper we analyze how the design of LGAD can be optimized to exploit their increased output signal to reach optimum timing performances. Our simulations show that these sensors, the so-called Ultra-Fast Silicon Detectors (UFSD), will be able to reach a time resolution factor of 10 better than that of traditional silicon sensors.

We have developed a fast simulation program to study the performance of silicon and diamond detectors, Weightfield2. The program uses GEANT4 libraries to simulate the energy released by an incoming particle in silicon (or diamond), and Ramo׳s theorem to generate the induced signal current. A graphical interface allows the user to configure many input parameters such as the incident particle, sensor geometry, presence and value of internal gain, doping of silicon sensor and its operating conditions, the values of an external magnetic field, ambient temperature and thermal diffusion. A simplified electronics simulator is also implemented to include the response of an oscilloscope and front-end electronics. The program has been validated by comparing its predictions for minimum ionizing and α particles with measured signals and TCAD simulations, finding very good agreement in both cases.

We propose to develop a fast, thin silicon sensor with gain capable to concurrently measure with high precision the space (∼10 μm) and time (∼10 ps) coordinates of a particle. This will open up new application of silicon detector systems in many fields. Our analysis of detector properties indicates that it is possible to improve the timing characteristics of silicon-based tracking sensors, which already have sufficient position resolution, to achieve four-dimensional high-precision measurements. The basic sensor characteristics and the expected performance are listed, the wide field of applications are mentioned and the required R&D topics are discussed.

We report on measurements on Ultra-Fast Silicon Detectors (UFSD) which are based on Low-Gain Avalanche Detectors (LGAD). They are n-on-p sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction, obtained with a highly doped implant. We have performed several beam tests with LGAD of different gain and report the measured timing resolution, comparing it with laser injection and simulations. For the 300 μm thick LGAD, the timing resolution measured at test beams is 120 ps while it is 57 ps for IR laser, in agreement with simulations using Weightfield2. For the development of thin sensors and their readout electronics, we focused on the understanding of the pulse shapes and point out the pivotal role the sensor capacitance plays.

In this paper, we report on the radiation resistance of 50-micron thick LGAD detectors manufactured at the Fondazione Bruno Kessler employing several different doping combinations of the gain layer. LGAD detectors with gain layer doping of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated Gallium have been designed and successfully produced. These sensors have been exposed to neutron fluences up to $\phi_n \sim 3 \cdot 10^{16}\; n/cm^2$ and to proton fluences up to $\phi_p \sim 9\cdot10^{15}\; p/cm^2$ to test their radiation resistance. The experimental results show that Gallium-doped LGADs are more heavily affected by initial acceptor removal than Boron-doped LGAD, while the presence of Carbon reduces initial acceptor removal both for Gallium and Boron doping. Boron low-diffusion shows a higher radiation resistance than that of standard Boron implant, indicating a dependence of the initial acceptor removal mechanism upon the implant width. This study also demonstrates that proton irradiation is at least twice more effective in producing initial acceptor removal, making proton irradiation far more damaging than neutron irradiation.

A small electromagnetic sampling calorimeter, installed in the ZEUS experiment in 1995, significantly enhanced the acceptance for very low x and low Q^2 inelastic neutral current scattering, e^{+}p \to e^{+}X, at HERA. A measurement of the proton structure function F_2 and the total virtual photon-proton (\gamma^*p) cross-section is presented for 0.11 \le Q^{2} \le 0.65 GeV^2 and 2 \times 10^{-6} \le x \le 6 \times 10^{-5}, corresponding to a range in the \gamma^{*}p c.m. energy of 100 \le W \le 230 GeV. Comparisons with various models are also presented.

Silicon strip detectors and photodiodes were irradiated in an 800 MeV proton beam. The change of the effective doping concentration was monitored by measuring diode C-V curves. Type inversion is observed at a fluence Φ = 1.5 × 1013 cm−2. Further evidence for type inversion is obtained from a study of pulses generated by an infrared LED in silicon strip detectors. A two-level parametrization is used to describe donor removal and acceptor state creation during proton irradiation: Neff = N0 exp(−cφ)−βφ. We measure values of c = (5.5 ± 1.1) × 1014 cm2 and β = (0.031 ± 0.006) cm−1. After type inversion the depletion voltage increases with proton fluence. This may set the limit for the lifetime of silicon detectors at future colliders. However, the occurence of type inversion does not degrade the performance of silicon strip detectors. The effective doping concentration showed a complex post irradiation behaviour. After a short term annealing period the doping concentration increased beyond the value that had been reached immediately after the exposure.

In this contribution we will review the progresses toward the construction of a tracking system able to measure the passage of charged particles with a combined precision of ∼10 ps and ∼10 μm, either using a single type of sensor, able to concurrently measure position and time, or a combination of position and time sensors.

This paper presents the principles of operation of Resistive AC-Coupled Silicon Detectors (RSDs) and measurements of the temporal and spatial resolutions using a combined analysis of laser and beam test data. RSDs are a new type of n-in-p silicon sensor based on the Low-Gain Avalanche Diode (LGAD) technology, where the n+ implant has been designed to be resistive, and the read-out is obtained via AC-coupling. The truly innovative feature of RSD is that the signal generated by an impinging particle is shared isotropically among multiple read-out pads without the need for floating electrodes or an external magnetic field. Careful tuning of the coupling oxide thickness and the n+ doping profile is at the basis of the successful functioning of this device. Several RSD matrices with different pad width-pitch geometries have been extensively tested with a laser setup in the Laboratory for Innovative Silicon Sensors in Torino, while a smaller set of devices have been tested at the Fermilab Test Beam Facility with a 120 GeV/c proton beam. The measured spatial resolution ranges between 2.5μm for 70–100 pad-pitch geometry and 17μm with 200–500 matrices, a factor of 10 better than what is achievable in binary read-out (binsize∕12). Beam test data show a temporal resolution of ∼40ps for 200 μm pitch devices, in line with the best performances of LGAD sensors at the same gain.

The DC-coupled Resistive Silicon Detectors (DC-RSD) are the evolution of the AC-coupled RSD (RSD) design, both based on the Low-Gain Avalanche Diode (LGAD) technology. The DC-RSD design concept intends to address a few known issues present in RSDs (e.g., baseline fluctuation, long tail-bipolar signals) while maintaining their advantages (e.g., signal spreading, 100% fill factor). The simulation of DC-RSD presents several unique challenges linked to the complex nature of its design and the large pixel size. The defining feature of DC-RSD, charge sharing over distances that can be as large as a millimetre, represents a formidable challenge for Technology-CAD (TCAD), the standard simulation tool. To circumvent this problem, we have developed a mixed-mode approach to the DC-RSD simulation, which exploits a combination of two simulation tools: TCAD and Spice. Thanks to this hybrid approach, it has been possible to demonstrate that, according to the simulation, the key features of the RSD, excellent timing and spatial resolutions (few tens of picoseconds and few microns), are maintained in the DC-RSD design. In this work, we present the developed models and methodology, mainly showing the results of device-level numerical simulation, which have been obtained with the state-of-the-art Synopsys Sentaurus TCAD suite of tools. Such results will provide all the necessary information for the first batch of DC-RSD produced by Fondazione Bruno Kessler (FBK) foundry in Trento, Italy.

The photoproduction reaction gamma p -> mu+ mu- p has been studied in ep interactions using the ZEUS detector at HERA. The data sample corresponds to an integrated luminosity of 43.2 pb^{-1}. The Upsilon meson has been observed in photoproduction for the first time. The sum of the products of the elastic Upsilon(1S), Upsilon(2S), Upsilon(3S) photoproduction cross sections with their respective branching ratios is determined to be 13.3 +- 6.0(stat.)^{+2.7}_{-2.3}(syst.) pb at a mean photon-proton centre of mass energy of 120 GeV. The cross section is above the prediction of a perturbative QCD model.

This paper presents measurements of D^{*\pm} production in deep inelastic scattering from collisions between 27.5 GeV positrons and 820 GeV protons. The data have been taken with the ZEUS detector at HERA. The decay channel $D^{*+}\to (D^0 \to K^- \pi^+) \pi^+ $ (+ c.c.) has been used in the study. The $e^+p$ cross section for inclusive D^{*\pm} production with $5<Q^2<100 GeV^2$ and $y<0.7$ is 5.3 \pms 1.0 \pms 0.8 nb in the kinematic region {$1.3<p_T(D^{*\pm})<9.0$ GeV and $| \eta(D^{*\pm}) |<1.5$}. Differential cross sections as functions of p_T(D^{*\pm}), $\eta(D^{*\pm}), W$ and $Q^2$ are compared with next-to-leading order QCD calculations based on the photon-gluon fusion production mechanism. After an extrapolation of the cross section to the full kinematic region in p_T(D^{*\pm}) and $\eta$(D^{*\pm}), the charm contribution $F_2^{c\bar{c}}(x,Q^2)$ to the proton structure function is determined for Bjorken $x$ between 2 $\cdot$ 10$^{-4}$ and 5 $\cdot$ 10$^{-3}$.

We present a study of how temperature affects the change in the depletion voltage of silicon PIN detectors damaged by radiation. We study the initial radiation damage and the short-term and long-term annealing of that damage as a function of temperature in the range from −10°C to +50°C, and as a function of 800 MeV proton fluence up to 1.5×1014 p/cm2. We express the pronounced temperature dependences in a simple model in terms of two annealing time constants which depend exponentially on the temperature.

A sample of 3120 K±→π±μ+μ− decay candidates with (3.3±0.7)% background contamination has been collected by the NA48/2 experiment at the CERN SPS, allowing a detailed study of the decay properties. The branching ratio was measured to be BR=(9.62±0.25)×10−8. The form factor W(z), where z=(Mμμ/MK)2, was parameterized according to several models. In particular, the slope of the linear form factor W(z)=W0(1+δz) was measured to be δ=3.11±0.57. Upper limits of 2.9×10−2 and 2.3×10−2 on possible charge asymmetry and forward–backward asymmetry were established at 90% CL. An upper limit BR(K±→π∓μ±μ±)<1.1×10−9 was established at 90% CL for the rate of the lepton number violating decay.

The development of Low-Gain Avalanche Detectors has opened up the possibility of manufacturing silicon detectors with signal larger than that of traditional sensors. In this paper we explore the timing performance of Low-Gain Avalanche Detectors, and in particular we demonstrate the possibility of obtaining ultra-fast silicon detector with time resolution of less than 20 picosecond.

We introduce a double-sided variant of low gain avalanche detector, suitable for pixel arrays without dead-area in between the different read-out elements. TCAD simulations were used to validate the device concept and predict its performance. Different design options and selected simulation results are presented, along with the proposed fabrication process.

Is it possible to design a detector able to concurrently measure time and position with high precision? This question is at the root of the research and development of silicon sensors presented in this contribution. Silicon sensors are the most common type of particle detectors used for charged particle tracking, however their rather poor time resolution limits their use as precise timing detectors. A few years ago we have picked up the gantlet of enhancing the remarkable position resolution of silicon sensors with precise timing capability. I will be presenting our results in the following pages.

We designed, produced, and tested RSD (Resistive AC-Coupled Silicon Detectors) devices, an evolution of the standard LGAD (Low-Gain Avalanche Diode) technology where a resistive n-type implant and a coupling dielectric layer have been implemented. The first feature works as a resistive sheet, freezing the multiplied charges, while the second one acts as a capacitive coupling for readout pads. We succeeded in the challenging goal of obtaining very fine pitch (50, 100, and 200 um) while maintaining the signal waveforms suitable for high timing and 4D-tracking performances, as in the standard LGAD-based devices.

In this paper we report results from a neutron irradiation campaign of Ultra-Fast Silicon Detectors (UFSD) with fluences of 1e14, 3e14, 6e14, 1e15, 3e15 and 6e15 neq/cm2. The UFSD used in this study are circular 50 μ m thick Low-Gain Avalanche Detectors (LGAD), with a 1.0 mm diameter active area. Hamamatsu Photonics (HPK), Japan, produced the UFSD with pre-irradiation internal gain in the range 5–70 depending on the bias voltage. The sensors were tested pre-irradiation and post-irradiation with minimum ionizing particles (MIPs) from a 90Sr β-source. The leakage current, internal gain and the timing resolution were measured as a function of bias voltage at −20 °C and −30 °C. The timing resolution of each device under test was extracted from the time difference with a second calibrated UFSD in coincidence, using the constant fraction discriminator (CFD) method for both. The dependence of the gain upon the irradiation fluence is consistent with the acceptor removal mechanism; at −20 °C the highest gain decreases from 70 before radiation to 2 after a fluence of 6e15 n/cm2. Consequently, the timing resolution was found to deteriorate from 20 ps to 50 ps. The results indicate that the most accurate time resolution is obtained varying with fluence the CFD value used to determine the time of arrival, from 0.1 for pre-irradiated sensors to 0.6 at the highest fluence. Key changes to the pulse shape induced by irradiation, i.e. (i) the contribution of charge multiplication not limited to the gain layer zone, (ii) the shortening of the rise time and (iii) the reduced pulse height, were compared with the WF2 simulation program and were found to be in agreement.

Fondazione Bruno Kessler (FBK, Trento, Italy) has recently delivered its first 50 $\mu$m thick production of Ultra-Fast Silicon Detectors (UFSD), based on the Low-Gain Avalanche Diode design. These sensors use high resistivity Si-on-Si substrates, and have a variety of gain layer doping profiles and designs based on Boron, Gallium, Carbonated Boron and Carbonated Gallium to obtain a controlled multiplication mechanism. Such variety of gain layers will allow identifying the most radiation hard technology to be employed in the production of UFSD, to extend their radiation resistance beyond the current limit of $\phi \sim$ 10$^{15}$ n$_{eq}$/cm$^2$. In this paper, we present the characterisation, the timing performances, and the results on radiation damage tolerance of this new FBK production.

We present a novel design of fine segmented low gain avalanchediodes ('GAD) based on trench-isolation technique. The proposed design reduces the width of the no-gain inter-pad region down to less than 10 μm, from the 20-80 μm of the current 'GAD technology, enabling the production of sensors with small pixel pitch and high fill-factor. Prototypes of this new technologywere produced in the FBK laboratories. Their electrical characterization in terms of I-V, gain measurement and response to a focused laser, indicates that the trenches provide electrical isolation among pixels without any increase in the dark current level and without affecting the gain of the sensor. In addition, I-V measurements of p-i-n diodes with the same trench-isolation structure demonstrate that such termination scheme can withstand more than 500 Volts without reaching breakdown. This is well above the typical operating bias voltage of 'GADs, thus confirming that trench-isolation is a promising solution for finely pixelated 'GAD sensors.

Abstract This paper presents the measurements on first very thin Ultra-Fast Silicon Detectors (UFSDs) produced by Fondazione Bruno Kessler; the data have been collected in a beam test setup at the CERN PS, using beam with a momentum of 12 GeV/c. UFSDs with a nominal thickness of 25 and 35 $$\mu$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mi>μ</mml:mi> </mml:math> m and an area of 1 $$\times$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mo>×</mml:mo> </mml:math> 1 $$\text {mm}^2$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msup> <mml:mtext>mm</mml:mtext> <mml:mn>2</mml:mn> </mml:msup> </mml:math> have been considered, together with an additional HPK 50- $$\mu$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mi>μ</mml:mi> </mml:math> m thick sensor, taken as reference. Their timing performances have been studied as a function of the applied voltage and gain. A time resolution of about 25 ps and of 22 ps at a voltage of 120 and 240 V has been obtained for the 25 and 35 $$\mu$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mi>μ</mml:mi> </mml:math> m thick UFSDs, respectively.

We present an analysis of the capacitances which are important for the operation of double-sided, AC-coupled silicon microstrip detectors. From frequency dependent measurements we extract interstrip, body and coupling capacitances of the strips, using SPICE simulations. Using electrostatic simulations we calculate the geometry dependence of interstrip and body capacitances and of depletion voltages. We evaluate the radiation hardness and the noise contribution of different strip geometries.

The exclusive production of $\rho^0$ mesons in deep inelastic electron-proton scattering has been studied using the ZEUS detector. Cross sections have been measured in the range $7 < Q^2 < 25$ GeV$^2$ for $\gamma^*p$ centre of mass (c.m.) energies from 40 to 130 GeV. The $\gamma^*p \to \rho^0 p$ cross section exhibits a $Q^{-(4.2 \pm 0.8 ^{+1.4}_{-0.5})}$ dependence and both longitudinally and transversely polarised $\rho^0$'s are observed. The $\gamma^*p \to \rho^0 p$ cross section rises strongly with increasing c.m. energy, when compared with NMC data at lower energy, which cannot be explained by production through soft pomeron exchange. The data are compared with perturbative QCD calculations where the rise in the cross section reflects the increase in the gluon density at low $x$. the gluon density at low $x$.

Dijet production by almost real photons has been studied at HERA with the ZEUS detector. Jets have been identified using the cone algorithm. A cut on xγOBS, the fraction of the photon energy participating in the production of the two jets of highest transverse energy, is used to define cross sections sensitive to the parton distributions in the proton and in the photon. The dependence of the dijet cross sections on pseudorapidity has been measured for xγOBS ⩾ 0.75 and xγOBS < 0.75. The former is sensitive to the gluon momentum density in the proton. The latter is sensitive to the ginon in the photon. The cross sections are corrected for detector acceptance and compared to leading order QCD calculations.

This paper presents the first analysis of diffractive photon dissociation events in deep inelastic positron-proton scattering at HERA in which the proton in the final state is detected and its momentum measured. The events are selected by requiring a scattered proton in the ZEUS leading proton spectrometer (LPS) with χ L > 0.97, where xL is the fraction of the incoming proton beam momentum carried by the scattered proton. The use of the LPS significantly reduces the contamination from events with diffractive dissociation of the proton into low mass states and allows a direct measurement of t, the square of the four-momentum exchanged at the proton vertex. The dependence of the cross section ont is measured in the interval 0.073 < |t| < 0.4 GeV2 and is found to be described by an exponential shape with the slope parameterb = 7.2 ± 1.1(stat.) −0.9 +0.7 (syst.) GeV−2. The diffractive structure function FD (4) is presented as 0.9 a function of χ H ≃ 1 − χ L and β, the momentum fraction of the struck quark with respect to χ H , and averaged over thet interval 0.073 < |t′ < 0.4 GeV2 and the photon virtuality range 5 <Q 2 < 20 GeV2. In the kinematic range 4 × 104 < χ p < 0.03 and 0.015 < β < 0.5, the χ p dependence ofF D(4) is fitted with a form (1/χ p )α , yieldinga − 1.00 ± 0.09 (stat.) −0.05 +0.11 (syst.). Upon integration overL, the structure functionF 2 D(3) is determined in a kinematic range extending to higher χ p and lower β compared to our previous analysis; the results are discussed within the framework of Regge theory.

We report on electrical and charge collection tests of silicon sensors with internal gain as part of our development of ultra-fast silicon detectors. Using C–V and α TCT measurements, we investigate the non-uniform doping profile of so-called low-gain avalanche detectors (LGAD). These are n-on-p pad sensors with charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction, obtained with a highly doped implant. We compare the bias dependence of the pulse shapes of traditional sensors and of LGAD sensors with different dopant density of the diffusion layer, and extract the internal gain.

In this paper we present the numerical simulation of silicon detectors with internal gain as the main tool for 4-dimensional (4D) particle trackers design and optimization. The Low-Gain Avalanche Diode (LGAD) technology and its present limitations are reviewed with the aim of introducing the Resistive AC-Coupled Silicon Detectors (RSD) paradigm as a case study of our investigation. Authors here present Spice-like and 2D/3D Technological Computer-Aided Design (TCAD) simulations to characterize sensors in terms of both their electrostatic behavior, capacitive (dynamic) coupling and radiation-hardness performances, showing the methodological approach used in order to extract the set of layout rules allowing the release of RSD1, the incoming production run at Fondazione Bruno Kessler (FBK) of next-generation silicon detectors for 4D tracking with intrinsic 100% fill-factor.

Several future high-energy physics facilities are currently being planned. The proposed projects include high energy e+e− circular and linear colliders, hadron colliders, and muon colliders, while the Electron–Ion Collider (EIC) is expected to construct at the Brookhaven National Laboratory in the future. Each proposal has its advantages and disadvantages in terms of readiness, cost, schedule, and physics reach, and each proposal requires the design and production of specific new detectors. This paper first presents the performances necessary for future silicon tracking systems at the various new facilities. Then it illustrates a few possibilities for the realization of such silicon trackers. The challenges posed by the future facilities require a new family of silicon detectors, where features such as impact ionization, radiation damage saturation, charge sharing, and analog read-out are exploited to meet these new demands.

Low Gain Avalanche Diodes (LGADs) are now considered a viable solution for 4D-tracking thanks to their excellent time resolution and good resistance to high radiation fluence. However, the currently available LGAD technology is well suited only for applications that require coarse space precision, pixels with pitch in the range 500 µm–1 mm, due to the presence of a no-gain region between adjacent pixels of about 50μm, in which the gain is completely suppressed. In this paper, we will discuss the segmentation issues in the LGAD technology and we will present two new segmentation strategies aimed at producing LGADs with high spatial resolution and high fill factor. The first presented design is the so-called Trench-Isolated LGAD (TI-LGAD). Here, the pixel isolation is provided by trenches, physically etched in the silicon and then filled with silicon oxide. The second design is the Resistive AC-coupled Silicon Detector (RSD), an evolution of LGADs, where the segmentation is obtained by means of AC-coupled electrodes. Prototypes of both designs have been produced at FBK and characterized at the Laboratories for Innovative Silicon Sensors (INFN and University of Turin) by means of a laser setup to estimate the space resolution and the fill factor. The functional characterization shows that both the technologies yield fully working small pixel LGADs (down to 50 µm), providing the first examples of sensors able to concurrently measure space and time with excellent precision.

Motivated by the large particle fluences anticipated for the SSC and LHC, we are performing a systematic study of radiation damage to silicon microstrip detectors. Here we report radiation effects on detectors cooled to 0°C (the proposed operating point for a large SSC silicon tracker) including leakage currents and change in depletion voltage. We also present results on the annealing behavior of the radiation damage. Finally, we report results of charge collection measurements of the damaged detectors made with an 241Am α source.

The amplitude of the signal collected from the PbWO4 crystals of the CMS electromagnetic calorimeter is reconstructed by a digital filtering technique. The amplitude reconstruction has been studied with test beam data recorded from a fully equipped barrel supermodule. Issues specific to data taken in the test beam are investigated, and the implementation of the method for CMS data taking is discussed.

Recent advances in segmented low-gain avalanche detectors (LGADs) make them promising for the position-sensitive detection of low-energy X-ray photons thanks to their internal gain. LGAD microstrip sensors fabricated by Fondazione Bruno Kessler have been investigated using X-rays with both charge-integrating and single-photon-counting readout chips developed at the Paul Scherrer Institut. In this work it is shown that the charge multiplication occurring in the sensor allows the detection of X-rays with improved signal-to-noise ratio in comparison with standard silicon sensors. The application in the tender X-ray energy range is demonstrated by the detection of the sulfur Kα and Kβ lines (2.3 and 2.46 keV) in an energy-dispersive fluorescence spectrometer at the Swiss Light Source. Although further improvements in the segmentation and in the quantum efficiency at low energy are still necessary, this work paves the way for the development of single-photon-counting detectors in the soft X-ray energy range.

Abstract RSDs (Resistive AC-Coupled Silicon Detectors) are n-in-p silicon sensors based on the LGAD (Low-Gain Avalanche Diode) technology, featuring a continuous gain layer over the whole sensor area. The truly innovative feature of these sensors is that the signal induced by an ionising particle is seen on several pixels, allowing the use of reconstruction techniques that combine the information from many read-out channels. In this contribution, the first application of a machine learning technique to RSD devices is presented. The spatial resolution of this technique is compared to that obtained with the standard RSD reconstruction methods that use analytical descriptions of the signal sharing mechanism. A Multi-Output regressor algorithm, trained with a combination of simulated and real data, leads to a spatial resolution of less than 2 μm for a sensor with a 100 μm pixel. The prospects of future improvements are also discussed.

The past ten years have seen the advent of silicon-based precise timing detectors for charged particle tracking. The underlying reason for this evolution is a design innovation: the Low-Gain Avalanche Diode (LGAD). In its simplicity, the LGAD design is an obvious step with momentous consequences: low gain leads to large signals maintaining sensors stability and low noise, allowing sensor segmentation. Albeit introduced for a different reason, to compensate for charge trapping in irradiated silicon sensors, LGAD found fertile ground in the design of silicon-based timing detectors. Spurred by this design innovation, solid-state-based timing detectors for charged particles are going through an intense phase of R&D, and hybrid and monolithic sensors, with or without internal gain, are being explored. This contribution offers a review of this booming field.

Measurements of the proton structure function $F_2$ for $0.6 < Q^2 < 17 {GeV}^2$ and $1.2 \times 10^{-5} < x <1.9 \times 10^{-3}$ from ZEUS 1995 shifted vertex data are presented. From ZEUS $F_2$ data the slopes $dF_2/d\ln Q^2$ at fixed $x$ and $d\ln F_2/d\ln(1/x)$ for $x < 0.01$ at fixed $Q^2$ are derived. For the latter E665 data are also used. The transition region in $Q^2$ is explored using the simplest non-perturbative models and NLO QCD. The data at very low $Q^2$ $\leq 0.65 {GeV}^2$ are described successfully by a combination of generalised vector meson dominance and Regge theory. From a NLO QCD fit to ZEUS data the gluon density in the proton is extracted in the range $3\times 10^{-5} < x < 0.7$. Data from NMC and BCDMS constrain the fit at large $x$. Assuming the NLO QCD description to be valid down to $Q^2\sim 1 {GeV}^2$, it is found that the $q\bar{q}$ sea distribution is still rising at small $x$ and the lowest $Q^2$ values whereas the gluon distribution is strongly suppressed.

The radiation damage resulting from the large particle fluences predicted at the Superconducting Super Collider induces significant leakage currents in Si detectors. In order to limit these currents, the detectors are operated at reduced temperatures ( approximately 0 degrees C). Results are presented of a study of temperature effects on both the initial radiation damage and the long-term annealing of that damage in Si PIN detectors. Depletion voltage results are reported. The detectors are exposed to approximately 10/sup 14//cm/sup 2/ 650-MeV protons. Very pronounced temperature dependences are observed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

The response of the CMS barrel calorimeter (electromagnetic plus hadronic) to hadrons, electrons and muons over a wide momentum range from 2 to 350 GeV/c has been measured. To our knowledge, this is the widest range of momenta in which any calorimeter system has been studied. These tests, carried out at the H2 beam-line at CERN, provide a wealth of information, especially at low energies. The analysis of the differences in calorimeter response to charged pions, kaons, protons and antiprotons and a detailed discussion of the underlying phenomena are presented. We also show techniques that apply corrections to the signals from the considerably different electromagnetic (EB) and hadronic (HB) barrel calorimeters in reconstructing the energies of hadrons. Above 5 GeV/c, these corrections improve the energy resolution of the combined system where the stochastic term equals 84.7±1.6% and the constant term is 7.4±0.8%. The corrected mean response remains constant within 1.3% rms.

Segmented silicon sensors with internal gain, the so called Ultra-FAST Silicon Detectors (UFSD), have been produced at FBK for the first time. UFSD are based on the concept of Low-Gain Avalanche Detectors (LGAD), which are silicon detectors with an internal, low multiplication mechanism (gain ∼ 10). This production houses two main type of devices: one type where the gain layer is on the same side of the read-out electrodes, the other type where the gain layer is on the side opposite to the pixellated electrodes (reverse-LGAD). Several technological splits have been included in the first production run, with the aim to tune the implantation dose of the multiplication layer, which controls the gain value of the detector. An extended testing on the wafers has been performed and the results are in line with simulations: the fabricated detectors show good performances, with breakdown voltages above 1000 Volts, and gain values in the range of 5–60 depending on the technological split. The detectors timing resolution has been measured by means of a laboratory setup based on an IR picosecond laser. The sample with higher gain shows time resolution of 55 ps at high reverse bias voltage, indicating very promising performance for future particle tracking applications.

In the past few years, there has been growing interest in the development of silicon sensors able to simultaneously measure accurately the time of passage and the position of impinging charged particles. In this contribution, a review of the progresses in the design of UFSD (Ultra-Fast Silicon Detectors) sensors, manufactured at the FBK (Fondazione Bruno Kessler) Foundry, aiming at tracking charged particles in 4 dimensions, is presented. The state-of-the-art UFSD sensors, with excellent timing capability, are planned to be used in both ATLAS and CMS experiments detector upgrade, in order to reduce the background due to the presence of overlapping events in the same bunch crossing. The latest results on sensors characterization including time resolution, radiation resistance and uniformity of the response are here summarized, pointing out the interplay between the design of the gain layer and the UFSD performances. The research is now focusing on the maximization of the sensor fill factor, to be able to reduce the pixel size, exploring the implementation of shallow trenches for the pixel isolation and the development of resistive AC-coupled UFSD sensors. In conclusion, a brief review on research paths tailored for detection of low energy X-rays or for low material budget applications is given.

The book describes the development of innovative silicon sensors known as ultra-fast silicon detectors for use in the space-time tracking of charge particles. The first comprehensive collection of information on the topic, otherwise currently scattered in existing literature, this book presents a comprehensive introduction to the development of ultra-fast silicon detectors with the latest technology and applications from the field. It will be an ideal reference for graduate and postgraduates studying high energy and particle physics and engineering, in addition to researchers in the area. Key features Authored by a team of subject area specialists, whose research group first invented ultra-fast silicon detectors The first book on the topic to explain the details of the design of silicon sensors for 4-dimensional tracking Presents state-of-the-art results, and prospects for further performance evolutions &nbsp; The Open Access version of this book, available at&nbsp;www.taylorfrancis.com/books/oa-mono/10.1201/9781003131946/, has been made available under a Creative Commons Attribution-Non Commercial-No Derivatives 4.0 license. Cover image credit goes to Marta Tornago &nbsp; &nbsp;

In the past few years, the need of measuring accurately the spatial and temporal coordinates of the particles generated in high-energy physics experiments has spurred a strong R&D in the field of silicon sensors. Within these research activities, the so-called Ultra-Fast Silicon Detectors (UFSDs), silicon sensors optimized for timing based on the Low-Gain Avalanche Diode (LGAD) design, have been proposed and adopted by the CMS and ATLAS collaborations for their respective timing layers. The defining feature of the Ultra-Fast Silicon Detectors (UFSDs) is the internal multiplication mechanism, determined by the gain layer design. In this paper, the performances of several types of gain layers, measured with a telescope instrumented with a 90Sr β-source, are reported and compared. The measured sensors are produced by Fondazione Bruno Kessler (FBK) and Hamamatsu Photonics (HPK). The sensor yielding the best performance, both when new and irradiated, is an FBK 45 μm-thick sensor with a carbonated deep gain implant, where the carbon and the boron implants are annealed concurrently with a low thermal load. This sensor is able to achieve a time resolution of 40 ps up to a radiation fluence of 2.5⋅1015 neq/cm2, delivering at least 5 fC of charge.

Abstract The recently developed Low-Gain Avalanche Diode (LGAD) technology has gained growing interest within the high-energy physics (HEP) community, thanks to its capability of internal signal amplification that improves the particle detection. Since the next generation of HEP experiments will require tracking detectors able to efficiently operate in environments where expected fluences will exceed 1 × 10 17 1 MeV n eq /cm 2 , the design of radiation-resistant particle detectors becomes of utmost importance. To this purpose, Technology Computer-Aided Design (TCAD) simulations are a relevant part of the current detector R&amp;D, not only to support the sensor design and optimization, but also for a better understanding and modelling of radiation damage. In this contribution, the recent advances in the TCAD modelling of non-irradiated and irradiated LGAD sensors are presented, whose validation relies on the agreement between the simulated and experimental data — in terms of current-voltage (I-V), capacitance-voltage (C-V), and gain-voltage (G-V) characteristics, coming from devices manufactured by Hamamatsu Photonics (HPK), and accounting for different irradiation levels and temperatures.

We report the first results from a simulation of the electrostatic properties of silicon microstrip detectors. We extract the capacitance and pulse shapes and show their importance for the design of front-end electronics and strip detector geometries for HERA and the SSC.

Performance tests of some aspects of the CMS ECAL were carried out on modules of the "barrel" sub-system in 2002 and 2003. A brief test with high energy electron beams was made in late 2003 to validate prototypes of the new Very Front End electronics. The final versions of the monitoring and cooling systems, and of the high and low voltage regulation were used in these tests. The results are consistent with the performance targets including those for noise and overall energy resolution, required to fulfil the physics programme of CMS at the LHC.

Calibration of the relative response of the individual channels of the barrel electromagnetic calorimeter of the CMS detector was accomplished, before installation, with cosmic ray muons and test beams. One fourth of the calorimeter was exposed to a beam of high energy electrons and the relative calibration of the channels, the intercalibration, was found to be reproducible to a precision of about 0.3%. Additionally, data were collected with cosmic rays for the entire ECAL barrel during the commissioning phase. By comparing the intercalibration constants obtained with the electron beam data with those from the cosmic ray data, it is demonstrated that the latter provide an intercalibration precision of 1.5% over most of the barrel ECAL. The best intercalibration precision is expected to come from the analysis of events collected in situ during the LHC operation. Using data collected with both electrons and pion beams, several aspects of the intercalibration procedures based on electrons or neutral pions were investigated.

This report describes the technical design and outlines the expected performance of the CMS-TOTEM Precision Proton Spectrometer (CT-PPS). CT-PPS adds precision proton tracking and timing detectors in the very forward region on both sides of CMS at about 200m from the IP to study central exclusive production (CEP) in proton-proton collisions. CEP provides a unique method to access a variety of physics topics at high luminosity LHC, such as new physics via anomalous production of $W$ and $Z$ boson pairs, high-$p_T$ jet production, and possibly the production of new resonances. The CT-PPS detector consists of a silicon tracking system to measure the position and direction of the protons, and a set of timing counters to measure their arrival time with a precision of the order of 10 ps. This in turn allows the reconstruction of the mass and momentum as well as of the $z$ coordinate of the primary vertex of the centrally produced system. The framework for the development and exploitation of CT-PPS is defined in a Memorandum of Understanding signed by CERN as the host laboratory and the CMS and TOTEM Collaborations. The expected performance of CT-PPS is discussed, including detailed studies of exclusive WW and dijet production. The planning for the implementation of the new detectors is presented, including construction, testing, and installation.

We present the project to install new forward proton detectors in the CMS and ATLAS experiments called CT-PPS and AFP respectively.

Ultra Fast Silicon Detectors (UFSD) are sensors optimized for timing measurements employing a thin multiplication layer to increase the output signal. A multipurpose read-out board hosting a low-cost, low-power fast amplifier was designed at the University of Kansas and tested at the European Organization for Nuclear Research (CERN) using a 180 GeV pion beam. The amplifier has been designed to read out a wide range of detectors and it was optimized in this test for the UFSD output signal. In this paper we report the results of the experimental tests using 50 μm thick UFSD with a sensitive area of 1.4mm2. A timing precision below 30 ps wasachieved.

We review the progress toward the development of a novel type of silicon detectors suited for tracking with a picosecond timing resolution, the so called Ultra-Fast Silicon Detectors. The goal is to create a new family of particle detectors merging excellent position and timing resolution with GHz counting capabilities, very low material budget, radiation resistance, fine granularity, low power, insensitivity to magnetic field, and affordability. We aim to achieve concurrent precisions of ∼ 10 ps and ∼ 10 μm with a 50 μm thick sensor. Ultra-Fast Silicon Detectors are based on the concept of Low-Gain Avalanche Detectors, which are silicon detectors with an internal multiplication mechanism so that they generate a signal which is factor ∼ 10 larger than standard silicon detectors.

To fully exploit the physics potentials of particle therapy in delivering dose with high accuracy and selectivity, charged particle therapy needs further improvement. To this scope, a multidisciplinary project (MoVeIT) of the Italian National Institute for Nuclear Physics (INFN) aims at translating research in charged particle therapy into clinical outcome. New models in the treatment planning system are being developed and validated, using dedicated devices for beam characterization and monitoring in radiobiological and clinical irradiations. Innovative silicon detectors with internal gain layer (LGAD) represent a promising option, overcoming the limits of currently used ionization chambers. Two devices are being developed: one to directly count individual protons at high rates, exploiting the large signal-to-noise ratio and fast collection time in small thicknesses (1 ns in 50 μm) of LGADs, the second to measure the beam energy with time-of-flight techniques, using LGADs optimized for excellent time resolutions (Ultra Fast Silicon Detectors, UFSDs). The preliminary results of first beam tests with therapeutic beam will be presented and discussed.

We report results from the testing of 35 {\mu}m thick Ultra-Fast Silicon Detectors (UFSD produced by Hamamatsu Photonics (HPK), Japan and the comparison of these new results to data reported before on 50 {\mu}m thick UFSD produced by HPK. The 35 {\mu}m thick sensors were irradiated with neutrons to fluences of 0, 1*10^14, 1*10^15, 3*10^15, 6*10^15 neq/cm^2. The sensors were tested pre-irradiation and post-irradiation with minimum ionizing particles (MIPs) from a 90Sr \b{eta}-source. The leakage current, capacitance, internal gain and the timing resolution were measured as a function of bias voltage at -20C and -27C. The timing resolution was extracted from the time difference with a second calibrated UFSD in coincidence, using the constant fraction method for both. Within the fluence range measured, the advantage of the 35 {\mu}m thick UFSD in timing accuracy, bias voltage and power can be established.

In this work, we introduce a new design concept: the DC-coupled Resistive Silicon Detectors, based on the LGAD technology.This new design intends to address a few known drawbacks of the first generation of AC-coupled Resistive Silicon Detectors (RSD).The sensor behaviour is simulated using a fast hybrid approach based on a combination of two packages, Weightfield2 and LTSpice.The simulation demonstrates that the key features of the RSD design are maintained, yielding excellent space and time resolutions: a few tens of ps and a few microns.In this report, we will outline the optimization methodology and the results of the simulation.We will also present detailed studies on the effects induced by the choice of key design parameters on the space and time resolutions provided by this sensor.

Abstract RSDs are LGAD silicon sensors with 100% fill factor, based on the principle of AC-coupled resistive read-out. Signal sharing and internal charge multiplication are the RSD key features to achieve picosecond-level time resolution and micron-level spatial resolution, thus making these sensors promising candidates as 4D-trackers for future experiments. This paper describes the use of a neural network to reconstruct the hit position of ionizing particles, an approach that can boost the performance of the RSD with respect to analytical models. The neural network has been trained in the laboratory and then validated on test beam data. The device-under-test in this work is a 450 μm-pitch matrix from the FBK RSD2 production, which achieved a resolution of about 65 μm at the DESY Test Beam Facility, a 50% improvement compared to a simple analytical reconstruction method, and a factor two better than the resolution of a standard pixel sensor of equal pitch size with binary read-out. The test beam result is compatible with the laboratory ones obtained during the neural network training, confirming the ability of the machine learning model to provide accurate predictions even in environments very different from the training one. Prospects for future improvements are also discussed.

This paper reports on the spatial and temporal resolutions of an RSD 450 microns pitch pixels array measured at the DESY test beam facility. RSDs, Resistive Silicon Detectors, also known as AC-LGAD, achieve excellent position and temporal resolution by exploiting charge sharing among neighboring electrodes. The RSD matrix used in this study is part of the second FBK RSD production, RSD2, composed of 450-micron pitch pixels with cross-shaped electrodes. A 7-pixel matrix was read out by the FAST2 ASIC, a 16-channel amplifier fully custom ASIC developed by INFN Torino using the 110 nm CMOS technology. The total area covered by the matrix is about 1.5 mm2. The position resolution reached in this test is 15 microns, about 3.4% of the pitch. The temporal resolution achieved in this work is 60 ps, dominated by the FAST2 resolution. The work also demonstrates that RSD sensors achieve 100% fill factor and homogenous resolutions over the whole matrix surface, making them suitable for 4D tracking applications.

This paper reports on a measurement campaign to characterize the inter-pad region of Ultra-Fast Silicon Detectors (UFSDs) manufactured by Fondazione Bruno Kessler. The devices under test are either pixel or strip arrays, featuring a large number of different inter-pad layouts; both pre-irradiation and irradiated sensors have been measured. The aim of the study is to link the design parameters of the inter-pad region to the operation of the sensors, providing insights into the design of UFSD arrays with narrow inter-pad gaps. We concluded that, in the UFSD design, the doping level and the area of the p-stop should be kept low, in order to avoid the early breakdown of the device and the micro-discharges effect; UFSDs with such characteristics proved also rather insensitive to floating pads and irradiation. Thanks to these findings, it was possible to design a UFSD array that yields the expected performance with an inter-pad width as small as 25 μm, significantly improving its fill factor with respect to standard designs. Two innovative experimental techniques are presented in this work: the first one is based on a TCT setup, the second makes use of an ultra-low light CCD camera.

Abstract EXFLU1 is a new batch of radiation-resistant silicon sensors manufactured at Fondazione Bruno Kessler (FBK, Italy). The EXFLU1 sensors utilize thin substrates that remain operable even after extensive irradiation. They incorporate Low-Gain Avalanche Diode (LGAD) technology, enabling internal multiplication of charge carriers to boost the small signal produced by a particle crossing their thin active thicknesses, ranging from 15 to 45 μ m. To address current challenges related to acceptor removal, the EXFLU1 production incorporates improved defect engineering techniques. This includes the so called carbonated LGADs, where carbon doping is implanted alongside boron in the gain layer. This contribution focuses on evaluating the performances of thin sensors with carbonated gain layer from the EXFLU1 production, before and after irradiation up to 2.5· 10 15 n 1 Mev eq. /cm 2 . The conducted tests involve static and transient characterizations, including I-V and C-V measurements, as well as laser and β -source tests. This work aims to present the state of the art in LGAD sensor technology with a carbonated gain layer and shows the characterization of the most radiation-resistant LGAD sensors produced to date.

A measurement of inclusive charged particle distributions in deep inelasticep scattering forγ*p centre-of-mass energies 75<W<175 GeV and momentum transfer squared 10<Q 2<160 GeV2 from the ZEUS detector at HERA is presented. The differential charged particle rates in theγ*p centre-of-mass system as a function of the scaled longitudinal momentum,x F, and of the transverse momentum,p* t and 〈p* t 2〉, as a function ofx F, W andQ 2 are given. Separate distributions are shown for events with (LRG) and without (NRG) a rapidity gap with respect to the proton direction. The data are compared with results from experiments at lower beam energies, with the naive quark parton model and with parton models including perturbative QCD corrections. The comparison shows the importance of the higher order QCD processes. Significant differences of the inclusive charged particle rates between NRG and LRG events at the sameW are observed. The value of 〈p* t 2〉 for LRG events with a hadronic massM x, which excludes the forward produced baryonic system, is similar to the 〈p* t 2〉 value observed in fixed target experiments atW≈M x.

In deep inelastic neutral current scattering of positrons and protons at the center of mass energy of 300 GeV, we observe, with the ZEUS detector, events with a high energy neutron produced at very small scattering angles with respect to the proton direction. The events constitute a fixed fraction of the deep inelastic, neutral current event sample independent of Bjorken x and Q2 in the range 3 · 10−4 < xBJ < 6 · 10−3 and 10 < Q2 < 100 GeV2.

The construction and performance of the barrel pre-series module 0 of the future ATLAS electromagnetic calorimeter at the LHC is described. The signal reconstruction and performance of ATLAS-like electronics has been studied. The signal to noise ratio for muons has been found to be 7.11±0.07. An energy resolution of better than 9.5%GeV1/2/E (sampling term) has been obtained with electron beams of up to 245GeV. The uniformity of the response to electrons in an area of Δη×Δφ=1.2×0.075 has been measured to be better than 0.8%.

In this paper we report measurements of the uniformity of time resolution, signal amplitude, and charged particle detection efficiency across the sensor surface of low-gain avalanche detectors (LGAD). Comparisons of the performance of sensors with different doping concentrations and different active thicknesses are presented, as well as their temperature dependence and radiation tolerance up to 6×1014 n/cm2. Results were obtained at the Fermilab test beam facility using 120 GeV proton beams, and a high precision pixel tracking detector. LGAD sensors manufactured by the Centro Nacional de Microelectrónica (CNM) and Hamamatsu Photonics (HPK) were studied. The uniformity of the sensor response in pulse height before irradiation was found to have a 2% spread. The signal detection efficiency and timing resolution in the sensitive areas before irradiation were found to be 100% and 30–40 ps, respectively. A “no-response” area between pads was measured to be about 130 μm for CNM and 170μm for HPK sensors. After a neutron fluence of 6×1014 n/cm2 the CNM sensor exhibits a large gain variation of up to a factor of 2.5 when comparing metalized and non-metalized sensor areas. An irradiated CNM sensor achieved a time resolution of 30 ps for the metalized area and 40 ps for the non-metalized area, while a HPK sensor irradiated to the same fluence achieved a 30 ps time resolution.

The properties of 50 um thick Low Gain Avalanche Diode (LGAD) detectors manufactured by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with 1 MeV neutrons. Their performance were measured in charge collection studies using b-particles from a 90Sr source and in capacitance-voltage scans (C-V) to determine the bias to deplete the gain layer. Carbon infusion to the gain layer of the sensors was tested by FBK in the UFSD3 production. HPK instead produced LGADs with a very thin, highly doped and deep multiplication layer. The sensors were exposed to a neutron fluence from 4e14 neq/cm2 to 4e15 neq/cm2. The collected charge and the timing resolution were measured as a function of bias voltage at -30C, furthermore the profile of the capacitance over voltage of the sensors was measured.

Photoproduction at HERA is studied in $ep$ collisions, with the ZEUS detector, for $\gamma p$ centre-of-mass energies ranging from 130-270 GeV. A sample of events with two high-$p_T$ jets ($p_T > 6$ GeV, $\eta <1.6$) and a third cluster in the approximate direction of the electron beam is isolated using a clustering algorithm. These events are mostly due to resolved photoproduction. The third cluster is identified as the photon remnant. Its properties, such as the transverse and longitudinal energy flows around the axis of the cluster, are consistent with those commonly attributed to jets, and in particular with those found for the two jets in these events. The mean value of the photon remnant $p_T$ with respect to the beam axis is measured to be $2.1 \pm 0.2$ GeV, which demonstrates substantial mean transverse momenta for the photon remnant.

A full-size prototype microstrip sensor for the silicon tracker of the SDC detector to be used at the Superconducting Super Collider has been fabricated at Hamamatsu Photonics. The sensor is double-sided, using an AC-coupled readout with 50 μm pitch strips. The sensor size is 3.4 × 6.0 cm2. Polycrystalline silicon is used as a bias feeding resistor on both surfaces. Each ohmic strip is isolated by a p+ blocking line. The detailed requirements for the silicon tracker and the corresponding specifications as well as how to achieve them are discussed. The static performances of this prototype sensor are presented.

The construction and beam test results of the ATLAS electromagnetic end-cap calorimeter pre-production module 0 are presented. The stochastic term of the energy resolution is between 10% and 12.5%GeV1/2 over the full pseudorapidity range. Position and angular resolutions are found to be in agreement with simulation. A global constant term of 0.6% is obtained in the pseudorapidity range 2.5<η<3.2 (inner wheel).

Ensuring the radiation hardness of PbWO4 crystals was one of the main priorities during the construction of the electromagnetic calorimeter of the CMS experiment at CERN. The production on an industrial scale of radiation hard crystals and their certification over a period of several years represented a difficult challenge both for CMS and for the crystal suppliers. The present article reviews the related scientific and technological problems encountered.

The properties of 60-μm thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazione Bruno Kessler (FBK), Trento (Italy) were tested before and after irradiation with minimum ionizing particles (MIPs) from a 90Sr β-source. This FBK production, called UFSD2, has UFSDs with gain layer made of Boron, Boron low-diffusion, Gallium, carbonated Boron and carbonated Gallium. The irradiation with neutrons took place at the TRIGA reactor in Ljubljana, while the proton irradiation took place at CERN SPS. The sensors were exposed to a neutron fluence of 4⋅1014, 8⋅1014, 1.5⋅1015, 3⋅1015, 6⋅ 1015 neq/cm2 and to a proton fluence of 9.6⋅ 1014 p/cm2, equivalent to a fluence of 6⋅ 1014 neq/cm2. The internal gain and the timing resolution were measured as a function of bias voltage at -20oC. The timing resolution was extracted from the time difference with a second calibrated UFSD in coincidence, using the constant fraction method for both.

The upgrades of the CMS and ATLAS experiments for the high luminosity phase of the Large Hadron Collider will employ precision timing detectors based on Low Gain Avalanche Detectors (LGADs). We present a suite of results combining measurements from the Fermilab Test Beam Facility, a beta source telescope, and a probe station, allowing full characterization of the HPK type 3.1 production of LGAD prototypes developed for these detectors. We demonstrate that the LGAD response to high energy test beam particles is accurately reproduced with a beta source. We further establish that probe station measurements of the gain implant accurately predict the particle response and operating parameters of each sensor, and conclude that the uniformity of the gain implant in this production is sufficient to produce full-sized sensors for the ATLAS and CMS timing detectors.

Events containing an isolated prompt photon with high transverse energy, together with a balancing jet, have been observed for the first time in photoproduction at HERA. The data were taken with the ZEUS detector, in a γp centre of mass energy range 120–250 GeV. The fraction of the incoming photon energy participating in the production of the prompt photon and the jet, xγ, shows a strong peak near unity, consistent with LO QCD Monte Carlo predictions. In the transverse energy and pseudorapidity range 5 ≤ ETγ < 10 GeV, −0.7 ≤ ηγ < 0.8, ETjet ≥ 5 GeV, and −1.5 ≤ ηjet ≤ 1.8, with xγOBS > 0.8, the measured cross section is 15.3 ± 3.8 ± 1.8 pb, in good agreement with a recent NLO calculation.

As part of a program to develop a silicon tracking device for the Superconducting Super Collider (SSC), radiation-hard CMOS transistors and p-i-n diodes have been exposed to the 800-MeV LAMPF (Los Alamos Meson Physics Facility) proton beam. The fluences accumulated in one week corresponded to the expected radiation levels of about ten SSC years. The leakage current constants for p-i-n diodes and threshold voltage shifts for CMOS transistors are determined under different biasing conditions. The results are presented and examined in detail.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

This paper describes the performance of a prototype timing detector, based on 50 μm thick Ultra Fast Silicon Detector, as measured in a beam test using a 180 GeV/c momentum pion beam. The dependence of the time precision on the pixel capacitance and bias voltage is investigated in this paper. A timing precision from 30 ps to 100 ps (RMS), depending on the pixel capacitance, has been measured at a bias voltage of 180 V.

The performance of the Ultra-Fast Silicon Detectors (UFSD) after irradiation with neutrons and protons is compromised by the removal of acceptors in the thin layer below the junction responsible for the gain. This effect is tested both with capacitance–voltage, C–V, measurements of the doping concentration and with measurements of charge collection, CC, using charged particles. We find a perfect linear correlation between the bias voltage to deplete the gain layer determined with C–V and the bias voltage to collect a defined charge, measured with charge collection. An example for the usefulness of this correlation is presented.

The cross section for the photoproduction of events containing three jets with a three-jet invariant mass of M_3J > 50 GeV has been measured with the ZEUS detector at HERA. The three-jet angular distributions are inconsistent with a uniform population of the available phase space but are well described by parton shower models and O(alpha alpha_s^2) pQCD calculations. Comparisons with the parton shower model indicate a strong contribution from initial state radiation as well as a sensitivity to the effects of colour coherence.

As part of a program to develop a silicon strip central tracking detector system for the Superconducting Super Collider (SSC), the effects of radiation damage in silicon detectors and their associated front-end readout electronics are being studied. The authors report on the results of neutron and proton irradiations at the Los Alamos National Laboratory and gamma -ray irradiations at UC Santa Cruz. Individual components on single-sided AC-coupled silicon strip detectors and on test structures were tested. Circuits fabricated in a radiation-hard CMOS process and individual transistors fabricated using dielectric isolation bipolar technology were also studied. Bulk damage to the silicon itself is seen as the limiting factor in the lifetime of a detector system. In particular, it is the acceptor site creation in the active volume of the silicon detector that will limit the lifetime to approximately 10 yr for the innermost detectors.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

The performance of electromagnetic calorimeter modules made of proton-irradiated PbWO4 crystals has been studied in beam tests. The modules, similar to those used in the Endcaps of the CMS electromagnetic calorimeter (ECAL), were formed from 5×5 matrices of PbWO4 crystals, which had previously been exposed to 24 GeV protons up to integrated fluences between 2.1× 1013 and 1.3× 1014 cm−2. These correspond to the predicted charged-hadron fluences in the ECAL Endcaps at pseudorapidity η = 2.6 after about 500 fb−1 and 3000 fb−1 respectively, corresponding to the end of the LHC and High Luminosity LHC operation periods. The irradiated crystals have a lower light transmission for wavelengths corresponding to the scintillation light, and a correspondingly reduced light output. A comparison with four crystals irradiated in situ in CMS showed no significant rate dependence of hadron-induced damage. A degradation of the energy resolution and a non-linear response to electron showers are observed in damaged crystals. Direct measurements of the light output from the crystals show the amplitude decreasing and pulse becoming faster as the fluence increases. The latter is interpreted, through comparison with simulation, as a side-effect of the degradation in light transmission. The experimental results obtained can be used to estimate the long term performance of the CMS ECAL.

The combination of precision space and time information in particle tracking, the so called 4D tracking, is being considered in the upgrade of the ATLAS, CMS and LHCb experiments at the High-Luminosity LHC, set to start data taking in 2024–2025. Regardless of the type of solution chosen, space–time tracking brings benefits to the performance of the detectors by reducing the background and sharpening the resolution; it improves tracking performances and simplifies tracks combinatorics. Space–time tracking also allows investigating new physics channels, for example it opens up the possibilities of new searches in long-living particles by measuring accurately the time of flight between the production and the decay vertexes. The foreseen applications of 4D tracking in experiments with very high acquisition rates, for example at HL-LHC, add one more dimension to the problem, increasing dramatically the complexity of the read-out system and that of the whole detector design: we call 5D tracking the application of 4D tracking in high rate environments.

In this contribution we describe the second run of RSD (Resistive AC-Coupled Silicon Detectors) designed at INFN Torino and produced by Fondazione Bruno Kessler (FBK), Trento. RSD are n-in-p detectors intended for 4D particle tracking based on the LGAD technology that get rid of any segmentation implant in order to achieve the 100% fill-factor. They are characterized by three key-elements, (i) a continuous gain implant, (ii) a resistive n-cathode and (iii) a dielectric coupling layer deposited on top, guaranteeing a good spatial reconstruction of the hit position while benefiting from the good timing properties of LGADs. We will start from the very promising results of our RSD1 batch in terms of tracking performances and then we will move to the description of the design of the RSD2 run. In particular, the principles driving the sensor design and the specific AC-electrode layout adopted to optimize the signal confinement will be addressed.

Abstract The next generation of high-energy physics experiments at future hadronic colliders will require tracking detectors able to efficiently operate in extreme radiation environments, where expected fluences will exceed 1 × 10 17 n eq /cm 2 . This new operating scenario imposes many efforts on the design of effective and radiation-resistant particle detectors. Low-Gain Avalanche Diode (LGAD) represents a remarkable advance because the radiation damage effects can be mitigated by exploiting its charge multiplication mechanism after heavy irradiation. To obtain the desired gain (about 10–20) on the sensor output signal, a careful implementation of the “multiplication” region is needed (i.e. the high-field junction implant). Moreover, a proper design of the peripheral region (namely, the guard-ring structure) is crucial to prevent premature breakdown and large leakage currents at very high fluences, when the bias voltage applied creates an electric field higher than 15 V/μm. In this contribution, the design of LGAD sensors for extreme fluence applications is discussed, addressing the critical technological aspects such as the choice of the active substrate thickness, the gain layer design and the optimization of the sensor periphery. The impact of several design strategies is evaluated with the aid of Technology-CAD (TCAD) simulations based on a recently proposed model for the numerical simulation of radiation damage effects on LGAD devices.

Objective. The performance of silicon detectors with moderate internal gain, named low-gain avalanche diodes (LGADs), was studied to investigate their capability to discriminate and count single beam particles at high fluxes, in view of future applications for beam characterization and on-line beam monitoring in proton therapy.Approach. Dedicated LGAD detectors with an active thickness of 55μm and segmented in 2 mm2strips were characterized at two Italian proton-therapy facilities, CNAO in Pavia and the Proton Therapy Center of Trento, with proton beams provided by a synchrotron and a cyclotron, respectively. Signals from single beam particles were discriminated against a threshold and counted. The number of proton pulses for fixed energies and different particle fluxes was compared with the charge collected by a compact ionization chamber, to infer the input particle rates.Main results. The counting inefficiency due to the overlap of nearby signals was less than 1% up to particle rates in one strip of 1 MHz, corresponding to a mean fluence rate on the strip of about 5 × 107p/(cm2·s). Count-loss correction algorithms based on the logic combination of signals from two neighboring strips allow to extend the maximum counting rate by one order of magnitude. The same algorithms give additional information on the fine time structure of the beam.Significance. The direct counting of the number of beam protons with segmented silicon detectors allows to overcome some limitations of gas detectors typically employed for beam characterization and beam monitoring in particle therapy, providing faster response times, higher sensitivity, and independence of the counts from the particle energy.

In this contribution we present our most recent numerical investigations towards the development of silicon particle detectors able to provide accurate measurements in both space and time (4D tracking). In particular, we discuss the performances of different Low-Gain Avalanche Diode (LGAD) detectors, by presenting comparisons between measurements and TCAD (Technology Computer-Aided Design) simulations, performed on several detectors fabricated by Fondazione Bruno Kessler (FBK, Italy), Centro Nacional de Microelectrónica (CNM, Spain) and Hamamatsu Photonics K.K. (HPK, Japan). To have a satisfactory timing resolution, carriers multiplication in LGAD has to be properly controlled through the implantation of a specific highly-dopedp-type layer underneath the n-cathode. This internal multiplication process is so crucial in view of having large output signals for accurate time measurements, that numerical simulation turns out to be one of the main tools in designing LGADs. For this reason, in this paper we present a simulation framework, where the most robust avalanche models - Massey, van Overstraeten-de Man and Okuto-Crowell - have been tested. Thus, at the end, we propose a reliable designing tool which is highly predictive in the field of research and development of LGADs.

In this paper we present an initial study on the effects induced by radiation on the signal generated by a minimum ionising particle in silicon detector. The results are obtained by implementing in the simulation programme Weightfield2 (WF2) charge carrier trapping and non linear distribution of the electric field. Results of sample simulations are presented, along with a discussion of the limitations of the current approach and ideas for future improvements.

Inclusive photoproduction of D*+- in ep collisions at HERA has been measured with the ZEUS detector for photon-proton centre of mass energies in the range 115 < W < 280 GeV and photon virtuality Q**2 < 4 GeV**2. The cross section sigma(ep --> D*X) integrated over the kinematic region pt(D*) > 3 GeV and -1.5 < eta(D*) < 1.0 is (10.6+-1.7(stat.)+1.6(syst.)-1.3(syst.)) nb. Differential cross sections as functions of pt(D*), eta(D*) and W are given. The data are compared with two next-to-leading order perturbative QCD predictions. For a calculation using a massive charm scheme the predicted cross sections are smaller than the measured ones. A recent calculation using a massless charm scheme is in agreement with the data.

Abstract We report on a systematic study of pulse shapes from silicon strip detectors. Using an infrared laser with a very fast rise and fall time to simulate ionization from charged particles, we were able to map out the response of the detectors as function of operating voltage (overdepletion), material uniformity (local radiation damage) and distance from the readout electronics along the strip. We have simulated the response with electrostatic and circuit simulators. We emphasize the importance of these effects for the design and operation of detectors and readout electronics for high luminosity hadron colliders, such as the LHC and SSC.

The decay asymmetries of the weak radiative hyperon decays Ξ0→Λγ and Ξ0→Σ0γ have been measured with high precision using data of the NA48/1 experiment at CERN. From about 52 000 Ξ0→Λγ and 15 000 Ξ0→Σ0γ decays, we obtain for the decay asymmetries αΞ0→Λγ=−0.704±0.019stat±0.064syst and αΞ0→Σ0γ=−0.729±0.030stat±0.076syst, respectively. These results are in good agreement with previous experiments, but more precise.

We report on the design of a full custom amplifier-comparator readout chip for silicon detectors with internal gain designed for precise timing applications. The ASIC has been developed in UMC 110 nm CMOS technology and is aimed to fulfill the CMS-TOTEM Precision Proton Spectrometer (CT-PPS) time resolution requirements (∼ 30 ps per detector plane). It features LVDS outputs and the signal dynamic range matches the requirements of the High Precision TDC (HPTDC) system. The preliminary measurements results with a test board are included.

With short resumes and highlights the discussions in the different working groups of the workshop MPI@LHC 2012 is documented.

Abstract Beam monitoring in particle therapy is a critical task that, because of the high flux and the time structure of the beam, can be challenging for the instrumentation. Recent developments in thin silicon detectors with moderate internal gain, optimized for timing applications (Ultra Fast Silicon Detectors, UFSD), offer a favourable technological option to conventional ionization chambers. Thanks to their fast collection time and good signal-to-noise ratio, properly segmented sensors allow discriminating and counting single protons up to the high fluxes of a therapeutic beam, while the excellent time resolution can be exploited for measuring the proton beam energy using time-of-flight techniques. We report here the results of the first tests performed with UFSD detector pads on a therapeutic beam. It is found that the signal of protons can be easily discriminated from the noise, and that the very good time resolution is confirmed. However, a careful design is necessary to limit large pile-up inefficiencies and early performance degradation due to radiation damage.

The Ultra Fast Silicon Detectors (UFSD) are a novel concept of silicon detectors based on the Low Gain Avalanche Diode (LGAD) technology, which are able to obtain time resolution of the order of few tens of picoseconds. First prototypes with different geometries (pads/pixels/strips), thickness (300 and 50 μm) and gain (between 5 and 20) have been recently designed and manufactured by CNM (Centro Nacional de Microelectrónica, Barcelona) and FBK (Fondazione Bruno Kessler, Trento). Several measurements on these devices have been performed in laboratory and in beam test and a dependence of the gain on the temperature has been observed. Some of the first measurements will be shown (leakage current, breakdown voltage, gain and time resolution on the 300 μm from FBK and gain on the 50 μm-thick sensor from CNM) and a comparison with the theoretically predicted trend will be discussed.

The NA62 experiment will begin taking data in 2015. Its primary purpose is a 10% measurement of the branching ratio of the ultrarare kaon decay $K^+ \to \pi^+ \nu \bar{ \nu }$, using the decay in flight of kaons in an unseparated beam with momentum 75 GeV/c.The detector and analysis technique are described here.

Detectors able to measure the time of flight with very high accuracy (∼10 ps RMS) are becoming fundamental in the design of new High Energy Physics experiments, where accurate time measurements will be used to mitigate pileup effects. The development of such detectors has spurred intense R&D in both silicon sensors and the associated readout electronics, aiming at obtaining silicon-based detectors with a time resolution in the few tens-of-picosecond range. This work presents FAST, a family of three different 20 channel amplifier-comparator chips, tailored to the readout of Ultra Fast Silicon Detectors. These ASICs have been designed optimizing the sensor-readout interplay with the aim of reaching the smallest possible jitter term. The three chips of the FAST family differ in the architecture of the front-end while sharing the channel back-end, consisting of a leading-edge discriminator and a LVDS driver. The goal of these front-ends is to achieve a time resolution of about 30 ps RMS while coupled to a sensor with a few pico-Farad capacitance, keeping the power budget of the single channel below 1.3 mW. This paper reports the description of the FAST design architecture and summarizes the results on the initial characterization of one chip of the FAST family, in a stand-alone test structure and when coupled to a UFSD.

Abstract We present the characterization of various components of the full custom bipolar process SHPi by Tektronix with respect to radiation hardness. The motivation of this work is to design a low-power, low-noise frontend with fast shaping for silicon microstrip detectors. We have tested BJTs ( npn of various size and a lateral pnp ), JFETs, Schottky diodes, implanted resistors and NiChrome resistors. The devices were irradiated to 60 Co dose of up to 5 Mrad in few steps, to fluence of 5.5∗10 13 n cm −2 of neutrons from a spallation source in few steps and to fluence of up to 1.1∗10 14 cm −2 of 650 MeV protons. It allows us to characterize the sensitivity of the devices on both ionization effects and displacement damage. We have measured the radiation effects on the dc parameters and characteristics of all components as well as on noise in npn BJTs of various size considered as candidates for the preamplifier input transistor. The most significant effect which we observe is the decrease of the current gain β in bipolar transistors for low emitter current densities. Both important noise sources, i.e. the shot noise of the collector current and the thermal noise of the base spread resistance are unaffected by irradiation.

AC-coupled silicon strip detectors were exposed to neutron fluences of 5·10 13 n/cm 2 and to Co 60 photon doses of 2.8 Mrad. No change in the value of the coupling capacitors was observed. Polysilicon resistor values increased by 15% and saturated after 200 krad photon dose. They were stable under neutron irradiation. Thee interstrip punchthrough threshold voltage increased from 4 to 13 V under photon irradiation. The accumulation of fixed charges in SiO 2 was measured using MOS capacitors and the photon-induced surface current generation velocity was determined with gated diodes.

A 64-channel amplifier-comparator for a silicon strip detector fabricated using the Tektronix SHPi bipolar process is described. This device is particularly useful in high rate colliders with silicon strip vertex detection. The design requirements include near-optimum noise performance, very low power use, proton radiation resistance, and microminiature size. The detector and amplifier can be DC-coupled, since the amplifier is capable of absorbing increasing detector leakage current under irradiation. Circuit measurements show that the circuit will perform properly in its expected environment.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

Charged particle production has been measured in deep inelastic scattering (DIS) events over a large range of $x$ and $Q^2$ using the ZEUS detector. The evolution of the scaled momentum, $x_p$, with $Q^2,$ in the range 10 to 1280 $GeV^2$, has been investigated in the current fragmentation region of the Breit frame. The results show clear evidence, in a single experiment, for scaling violations in scaled momenta as a function of $Q^2$.