Diego Alejandro Sanz Becerra

The observation of Higgs boson production in association with a top quark-antiquark pair is reported, based on a combined analysis of proton-proton collision data at center-of-mass energies of √s = 7, 8, and 13 TeV, corresponding to integrated luminosities of up to 5.1, 19.7, and 35.9  fb^(-1), respectively. The data were collected with the CMS detector at the CERN LHC. The results of statistically independent searches for Higgs bosons produced in conjunction with a top quark-antiquark pair and decaying to pairs of W bosons, Z bosons, photons, τ leptons, or bottom quark jets are combined to maximize sensitivity. An excess of events is observed, with a significance of 5.2 standard deviations, over the expectation from the background-only hypothesis. The corresponding expected significance from the standard model for a Higgs boson mass of 125.09 GeV is 4.2 standard deviations. The combined best fit signal strength normalized to the standard model prediction is 1.26^(+0.31)_(−0.26).

Abstract We have measured the radiation tolerance of poly-crystalline and single-crystalline diamonds grown by the chemical vapor deposition (CVD) process by measuring the charge collected before and after irradiation in a 50 m pitch strip detector fabricated on each diamond sample. We irradiated one group of sensors with 800 MeV protons, and a second group of sensors with 24 GeV protons, in steps, to protons cm −2 and protons cm −2 respectively. We observe the sum of mean drift paths for electrons and holes for both poly-crystalline CVD diamond and single-crystalline CVD diamond decreases with irradiation fluence from its initial value according to a simple damage curve characterized by a damage constant for each irradiation energy and the irradiation fluence. We find for each irradiation energy the damage constant, for poly-crystalline CVD diamond to be the same within statistical errors as the damage constant for single-crystalline CVD diamond. We find the damage constant for diamond irradiated with 24 GeV protons to be and the damage constant for diamond irradiated with 800 MeV protons to be . Moreover, we observe the pulse height decreases with fluence for poly-crystalline CVD material and within statistical errors does not change with fluence for single-crystalline CVD material for both 24 GeV proton irradiation and 800 MeV proton irradiation. Finally, we have measured the uniformity of each sample as a function of fluence and observed that for poly-crystalline CVD diamond the samples become more uniform with fluence while for single-crystalline CVD diamond the uniformity does not change with fluence.

We measured the radiation tolerance of commercially available diamonds grown by the Chemical Vapor Deposition process by measuring the charge created by a 120 GeV hadron beam in a 50 μm pitch strip detector fabricated on each diamond sample before and after irradiation. We irradiated one group of samples with 70 MeV protons, a second group of samples with fast reactor neutrons (defined as energy greater than 0.1 MeV), and a third group of samples with 200 MeV pions, in steps, to (8.8±0.9) × 1015 protons/cm2, (1.43±0.14) × 1016 neutrons/cm2, and (6.5±1.4) × 1014 pions/cm2, respectively. By observing the charge induced due to the separation of electron-hole pairs created by the passage of the hadron beam through each sample, on an event-by-event basis, as a function of irradiation fluence, we conclude all datasets can be described by a first-order damage equation and independently calculate the damage constant for 70 MeV protons, fast reactor neutrons, and 200 MeV pions. We find the damage constant for diamond irradiated with 70 MeV protons to be 1.62±0.07(stat)±0.16(syst)× 10-18 cm2/(p μm), the damage constant for diamond irradiated with fast reactor neutrons to be 2.65±0.13(stat)±0.18(syst)× 10-18 cm2/(n μm), and the damage constant for diamond irradiated with 200 MeV pions to be 2.0±0.2(stat)±0.5(syst)× 10-18 cm2/(π μm). The damage constants from this measurement were analyzed together with our previously published 24 GeV proton irradiation and 800 MeV proton irradiation damage constant data to derive the first comprehensive set of relative damage constants for Chemical Vapor Deposition diamond. We find 70 MeV protons are 2.60 ± 0.29 times more damaging than 24 GeV protons, fast reactor neutrons are 4.3 ± 0.4 times more damaging than 24 GeV protons, and 200 MeV pions are 3.2 ± 0.8 more damaging than 24 GeV protons. We also observe the measured data can be described by a universal damage curve for all proton, neutron, and pion irradiations we performed of Chemical Vapor Deposition diamond. Finally, we confirm the spatial uniformity of the collected charge increases with fluence for polycrystalline Chemical Vapor Deposition diamond, and this effect can also be described by a universal curve.

We have measured the radiation tolerance of commercially available diamonds grown by the Chemical Vapor Deposition process by measuring the charge created by a 120 GeV hadron beam in a 50 µm pitch strip detector fabricated on each diamond sample before and after irradiation.We irradiated one group of samples with 70 MeV protons, a second group of samples with fast reactor neutrons (defined as energy greater than 0.1 MeV) and a third group of samples with 200 MeV pions, in steps, to (8.8 ± 0.9) × 10 15 protons/cm 2 , (1.43 ± 0.14) × 10 16 neutrons/cm 2 and (6.5 ± 0.5) × 10 14 pions/cm 2 respectively.By observing the charge induced due to the separation of electron-hole pairs created by the passage of the hadron beam through each sample, on an event-by-event basis, as a function of irradiation fluence, we conclude all data sets can be described by a first order damage equation and independently calculate the damage constant for 70 MeV protons, fast reactor neutrons and 200 MeV pions.We find the damage constant for diamond irradiated with 70 MeV protons to be 1.61 ± 0.07 (stat) ± 0.15 (syst) × 10 -18 cm 2 /(p µm), the damage constant for diamond irradiated with fast reactor neutrons to be 2.65 ± 0.13 (stat) ± 0.16 (syst) × 10 -18 cm 2 /(n µm) and the damage constant for diamond irradiated with 200 MeV pions to be 2.0 ± 0.2 (stat) ± 0.5 (syst) × 10 -18 cm 2 /(π µm).The damage constants from this measurement were analyzed together with our previously published 24 GeV proton irradiation and 800 MeV proton irradiation damage constant data to derive the first comprehensive set of relative damage constants for Chemical Vapor Deposition diamond.We find 70 MeV protons are 2.60 ± 0.27 times more damaging than 24 GeV protons, fast reactor neutrons are 4.27 ± 0.34 times more damaging than 24 GeV protons and 200 MeV pions are 3.2 ± 0.8 more damaging than 24 GeV protons.We also observe the measured data can be described by a universal damage curve for all proton, neutron and pion irradiations we have performed of Chemical Vapor Deposition diamond.Finally, we confirm the FWHM/MP ratio of the signal spectrum, a measure of the spatial uniformity of the collected charge, decreases with fluence for polycrystalline Chemical Vapor Deposition diamond and this effect can also be described by a universal curve.

Diamond is used as detector material in high energy physics experiments due to its inherent radiation tolerance. The RD42 collaboration has measured the radiation tolerance of chemical vapour deposition (CVD) diamond against proton, pion, and neutron irradiation. Results of this study are summarized in this article. The radiation tolerance of diamond detectors can be further enhanced by using a 3D electrode geometry. We present preliminary results of a poly-crystalline CVD (pCVD) diamond detector with a 3D electrode geometry after irradiation and compare to planar devices of roughly the same thickness.

Fabrication of metallic microstructures at the Cleanroom facilities of Los Andes University allows researchers to get involved in the fields of microelectronics and microsystems. Different techniques for the fabrication of metallic microstructures of cooper and aluminum on glass and silicon substrates have been implemented. Those techniques were used in the fabrication of passive microelectronics devices. The implemented techniques at the Clean room using mask-free photolithography and selective material chemical etching are described in this document. Fabrication techniques reached resolutions of 5 µm. Those processes were tested for thin metal deposition layers of copper and aluminum with thickness from 50 to 200 nm.

Diamond is a material in use at many nuclear and high energy facilities due to its inherent radiation tolerance and ease of use. We have characterized detectors based on chemical vapor deposition (CVD) diamond before and after proton irradiation. We present preliminary results of the spatial resolution of unirradiated and irradiated CVD diamond strip sensors. In addition, we measured the pulse height versus particle rate of unirradiated and irradiated polycrystalline CVD (pCVD) diamond pad detectors up to a particle flux of $20\,\mathrm{MHz/cm^2}$ and a fluence up to $4 \times 10^{15}\,n/\mathrm{cm^2}$.

As a possible candidate for extremely radiation tolerant tracking devices we present a novel detector design - namely 3D detectors - based on poly-crystalline CVD diamond sensors with a pixel readout. The fabrication of recent 3D detectors as well their results in recent beam tests are presented. We measured the hit efficiency and signal response of two 3D diamond detectors with 50 × 50 μm cell sizes using pixel readout chip technologies currently used at CMS and ATLAS. In all runs, both devices attained efficiencies >98 % in a normal incident test beam of minimum ionising particles. The highest efficiency observed during the beam tests was 99.2 %.

We have measured the radiation tolerance of chemical vapor deposition (CVD) diamond against protons and neutrons.The relative radiation damage constant of 24 GeV protons, 800 MeV protons, 70 MeV protons, and fast reactor neutrons is presented.The results are used to combine the measured data into a universal damage curve for diamond material.